Opto Diode Corporation, an ITW company, introduces an infrared light-emitting diode (IRLED) in a convenient TO-66 package for heatsink attach, the OD-669. The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.
Total power output ranges from 390 mW (minimum) to 500 mW (typical) under test conditions at 300 mA. The spectral bandwidth at 50% is 80 nm, and the half intensity beam angle is typically 120 degrees. The forward voltage of the OD-669 ranges from 13.5 volts (typical) to 15 volts (maximum); reverse breakdown voltage is at minimum 5 volts and 30 volts (typical). Capacitance is 11 pF; the rise time and fall time is typically 3 µsec.
Thermal parameters include the storage and operating temperature ranges of -55 °C to 100 °C and the maximum junction temperature of 100 °C.
To download OD-669 specifications that include a thermal derating curve chart, peak pulse current graph, radiation pattern graphic, power output vs. temperature, and more, please click here.
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