Cree, Inc. announced that its newly expanded portfolio of 1200-volt (V) silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are being incorporated into the latest advanced power supplies from Delta Elektronika BV. Delta Elektronika demonstrated a 21% decrease in overall power supply losses and a reduction in component count by up to 45%, when compared to power supply products using traditional silicon technology.
Since 1959, Netherlands-based Delta Elektronika BV has specialised in producing reliable, quality power supplies for a range of industrial applications, such as specialised equipment used in factories, automation and industrial power conversion. Its power supplies typically provide efficiency with low noise levels and are well known for their long operating life.
Introduced in March 2013, Cree’s 2nd generation SiC MOSFETs enables power supply manufacturers to reduce their component count to improve reliability while maintaining or improving the power supply’s efficiency. Improving power density can also lead to reductions in the size, weight, volume and, in some cases, cost of power supplies. SiC has been demonstrated to achieve more than twice the power density of typical silicon technology in standard power-supply designs.
Cree’s packaged SiC MOSFETs are available from DigiKey, Farnell/Newark, Richardson and Mouser and die are available from SemiDice.
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