OSI Laser Diode, Inc. (LDI), an OSI Systems Company, will present the CVN 63-90ECL, a 905 nm pulsed laser with an enhanced far field divergent beam at SPIE Photonics West 2019. The advanced technology device’s far field beam pattern features equivalent divergence values for the fast (perpendicular) and the slow (parallel) axes of emission. The far field pattern delivers higher coupling efficiency into standard spherical lens systems, making it ideal for critical defense tasks.
The RoHS-compliant laser diode with integrated micro lens is hermetically sealed in a rugged, 9 mm package. The device, with its robust survival capability, can operate in extremely harsh environmental conditions and is perfectly suited for demanding applications such as field-deployed range finders.
OSI LDI’s pulsed laser operates between 895 nm (minimum) and 915 nm (maximum), with a typical responsivity of 905 nm. Other features include a spectral width of 8 nm, peak power of 75W, a pulse width of 100 nS, and drive current at 30A. The storage temperature ranges from -40 degrees to +85 degrees C, and operating temperature is 25 degrees C.
To learn more about the CVN 63-90ECL, 905 nm pulsed laser diode with integrated micro lens, please stop by OSI LDI’s South Hall booth #551 at SPIE Photonics West, Feb. 5 - 7, 2019, Moscone Center, San Francisco, for a demonstration.