IXYS Corporation, a manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management and motor control applications, has announced the release of the high-voltage Power MOSFET (i.e., metal-oxide-semiconductor field-effect transistor) product line: 4500-volt (V) N-Channel Power MOSFETs in international standard-size packages. The current ratings range from 200 milliamperes (mA) to 2 amperes (A). They are specifically designed to address demanding, fast-switching power conversion applications requiring high blocking voltages up to 4.5kV.
Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are suitable for parallel-device operations, which are more efficient than series-connected, lower-voltage MOSFETs. Parallel operations also reduce the associated gate-drive circuitry, simplifying the design, saving printed circuit board (PCB) board space and improving reliability.
Moreover, a ceramic isolation of up to 4.5kV is achieved with the Direct Copper Bond (DCB) substrate technology: an electrically isolated tab is provided for heat sinking. The DCB provides low thermal impedance, as well as power and temperature cycling capabilities. The moulding epoxies meet the Underwriters Laboratories (UL) 94 V-0 flammability classification.
These new Power MOSFETs can provide a suitable solution for applications such as tapping power from the high voltage grid, capacitor discharge circuits, high-voltage automated test equipment, laser and x-ray generation systems, high-voltage power supplies and pulse circuits.
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