Opto Diode, a division of Illinois Tool Works (ITW) and a member of the ITW Photonics Group, launches the UVG100 photo diode. The new photo detector features ultraviolet (UV) response with a 100-square-millimetre (mm2) active area. Shipped with a temporary protective cover plate, the device delivers 100% internal quantum efficiency (QE).
All of Opto Diode’s IRD products are designed for long-lifetime operation in high-particle, flux environments with no loss of responsivity. The new UVG100 absolute photo diode features performance with radiation hardness. The proprietary oxy-nitride front window ensures operation without the degradation that often occurs with high humidity and other undesirable environmental conditions, according to the company.
Responsivity under test conditions at 254 nanometres (nm) ranges from a minimum of 0.08 amperes per watt (A/W) to a maximum of 0.13 A/W with a typical reading of 0.09 A/W. The rise time at 10 volts (V) has a maximum of 10 microseconds (µs). The shunt resistance at ± 10 millivolts (mV) has a minimum of 20 megaohms (MOhms); the reverse breakdown voltage is typically 10V; and capacitance is typically 10 nanofarads (nF) with a maximum of 20nF.
Suitable for applications that require stability for the detection of vacuum UV and extreme UV photons, Opto Diode’s UVG100 silicon photo diodes are available for shipping.
Back to Products
