Opto Diode, a division of ITW and a member of the ITW Photonics Group, announced a new single active-area photodiode featuring 100 square millimetres (mm2): the SXUV100. The highly sensitive device permits detection to 1 nanometre (nm) and provides a remarkably stable response after exposure to extreme ultraviolet/ultraviolet (EUV/UV) conditions. Best applications include detection of 13.5nm wavelengths or any high-power density source monitoring between 1nm and 150nm.
The new photodiode is operational from 1nm to 1000 nm, with peak photon responsivity at 0.27 amperes per watt (A/W) (at 1nm) and 0.33 A/W (at 850nm). Shunt resistance (Rsh) at ±10 millivolts (mV) is 10 megaOhms (MOhms) (minimum), the capacitance is typically 6 nanofarads (nF) and the response time is typically 250 nanoseconds (ns).
The new SXUV100’s operating and storage temperatures range from -10°C to +40°C ambient (+14°F to +140°F) and from -20°C to +80°C in nitrogen or vacuum conditions (-4°F to +176°F). The maximum junction temperature is +70°C (+158°F) and the lead-soldering temperature is 260°C (500°F) at 0.080 inches from the case for 10 seconds.
Opto Diode’s new 100mm2 photodiodes are available in single or volume quantities and are shipping now.
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