Hamamatsu Photonics introduced a new range of indium-gallium-arsenide (InGaAs) photodiode arrays, the G12430 series, designed for near-infrared (NIR) spectroscopic analysis.
Formed in a ceramic dual in-line package (DIP), the G12430 comes in three different array sizes: 16, 32 or 46 elements. The element size on each of these sensors is large, which enables high light collection along the entirety of the array; the G12430-016D offers elements measuring 0.45 millimetres (mm) × 1mm and the G12430-032D and G12430-046D offer an element size of 0.2mm × 1mm, according to the company.
The G12430 series offers a spectral range in the NIR from 0.9 micrometres (µm) to 1.7µm with a typical photosensitivity of 0.95 amperes per watt (A/W) under room temperature operation, so there is no need for additional cooling, per the company. These features are what make them suitable for simple measurement in NIR spectrophotometers.