Rofin-Baasel Lasertech is launching a new upgraded version of its Dual Line c-Si laser processing system that provides improved productivity and lowers processing costs in volume production of next-generation PERC (Passivated Emitter and Rear Cells) solar cell design.
The latest Dual Line c-Si modular platform will be unveiled in booth 615, Hall 3 at the forthcoming SNEC 8th 2014, International Photovoltaic Power Generation Exhibition, in Shanghai, China 20 to 22 May, 2014 at the Shanghai New International Expo Center.
Initially launched over 3 years ago, the Dual Line c-Si laser processing system has been installed at multiple leading PV manufacturer’s facilities worldwide that are focused on PERC and selective emitter processes for improvements of up to a 1% absolute efficiency gain and higher productivity that lowers production costs.
Key technical developments for PERC cells undertaken within the Photovoltaics Innovation Alliance FutureFab project, funded by the German Federal Ministry of Education and Research (BMBF), included in-depth analysis of short wavelength and short pulse laser tool requirements to minimize sub-surface damage during rear-side contact hole formation and optimize rear side passivation.
Important to the optimization of the process was the ability to use industrial lasers offering up to 5 times higher power compared to the previously used nanosecond laser source, reducing laser process cycle times per wafer significantly and improving overall wafer throughput, critical to volume production applications.
The Dual Line c-Si can now be equipped with a high power ns-SHG-laser with adapted beam profile specifically developed for the creation of larger dot diameters without increasing the laser induced damage. This patent-pending process for a dot style opening of the passivation layers leads to scan-speeds exceeding 20 m/s. The company reports that this is a significant breakthrough for PERC cells employing dot pattern designs, as laser ablation cycle times are reduced significantly and thus enabling lower production costs.
The Dual Line c-Si system also features the inclusion of “on the fly” processing, a new system that virtually eliminates wafer handling and transfer times between laser processing cycles, improving productivity by providing processing speeds of up to 3,600WPH (Wafers-Per-Hour). Further developments are underway that are expected to lead to ‘on the fly processing throughputs even beyond 4000 WPH.
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