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Hamamatsu Photonics has developed a new semiconductor failure analysis system called the “PHEMOS-X C15765-01” that in just a single unit utilizes visible to near-infrared light to analyze semiconductor defects. What makes this possible is a newly mounted multi-wavelength laser scanner that applies our unique in-house optical design technology. Efficiently utilizing multi-wavelength light allows high sensitivity and high resolution essential for localizing semiconductor failures and so will improve failure analysis efficiency in diverse semiconductor devices that will be in high demand, such as state-of-the-art semiconductor devices whose circuit line width keeps on shrinking as well as power semiconductors that control electrical power more efficiently than ordinary semiconductor devices. Sales of the PHEMOS-X start on Thursday, April 1, 2021 for both domestic and overseas semiconductor device manufacturers.

The PHEMOS-X is a semiconductor failure analysis system that can be equipped with up to five lasers having different output wavelengths from visible to near-infrared light. With just a single unit, the PHEMOS can localize failures with high sensitivity and high resolution. When a voltage is applied to a semiconductor device, the failure points in the semiconductor device emit light and heat. Scanning a semiconductor device with a laser beam while a voltage is applied to it causes the electrical current and operating state at the failure location to change. By utilizing these properties, the failure location can be estimated by detecting signals that represent changes in the semiconductor device caused by the applied voltage, laser scanning and visualizing those signals as images. At Hamamatsu Photonics we develop, manufacture and sell semiconductor failure analysis systems for various semiconductor devices in order to meet customer demands that vary with the constant advances made in semiconductor devices.  

Labels: Hamamatsu Photonics,semiconductor,failure analysis,near-infrared

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